Abatement and strip process chamber in a load lock configuration

ABSTRACT

Examples of the present invention include a method for removing halogen-containing residues from a substrate. The method includes transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber. The load lock chamber is coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly. The chemistry includes halogen. Halogen-containing residues are removed from the etched substrate in a second chamber volume of the load lock chamber. Cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No. 13/746,831, filed Jan. 22, 2013, which claims benefit of U.S. Provisional Patent Application Ser. No. 61/604,990, filed Feb. 29, 2012, both of which are herein incorporated by reference in their entireties.

BACKGROUND Field

Examples of the present invention generally relates to a method and apparatus for fabricating devices on a semiconductor substrate. More particularly, examples of the present invention relate to a load lock chamber including one chamber volume configured for processing a substrate.

Description of the Related Art

Ultra-large-scale integrated (ULSI) circuits may include more than one million electronic devices (e.g., transistors) that are formed on a semiconductor substrate, such as a silicon (Si) substrate, and cooperate to perform various functions within the device. Typically, the transistors used in the ULSI circuits are complementary metal-oxide-semiconductor (CMOS) field effect transistors.

Plasma etching is commonly used in the fabrication of transistors and other electronic devices. During plasma etch processes used to form transistor structures, one or more layers of a film stack (e.g., layers of silicon, polysilicon, hafnium dioxide (HfO₂), silicon dioxide (SiO₂), metal materials, and the like) are commonly exposed to etchants comprising at least one halogen-containing gas, such as hydrogen bromide (HBr), chlorine (Cl₂), carbon tetrafluoride (CF₄), and the like. Such processes cause a halogen-containing residue to build up on the surfaces of the etched features, etch masks, and elsewhere on the substrate.

When exposed to a non-vacuumed environment (e.g., within factory interfaces or substrate storage cassettes) and/or during consecutive processing, gaseous halogens and halogen-based reactants (e.g., bromine (Br₂), chlorine(Cl₂), hydrogen chloride (HCl), and the like) may be released from the halogen-containing residues deposited during etching. The released halogens and halogen-based reactants create particle contamination and cause corrosion of the interior of the processing systems and factory interfaces, as well as corrosion of exposed portions of metallic layers on the substrate. Cleaning of the processing systems and factory interfaces and replacement of the corroded parts is a time consuming and expensive procedure.

Several processes have been developed to remove the halogen-containing residues on the etched substrates. For example, the etched substrate may be transferred into a remote plasma reactor to expose the etched substrate to a gas mixture that converts the halogen-containing residues to non-corrosive volatile compounds that may be out-gassed and pumped out of the reactor. However, such process requires a dedicated process chamber along with an additional step, causing increased tool expense, reduced manufacturing productivity and throughput, resulting in high manufacturing cost.

Therefore, there is a need for an improved method and apparatus for removing halogen-containing residues from a substrate.

SUMMARY

Examples of the present invention generally provide apparatus and methods for processing a substrate. Particularly, examples of the present inventions provide a load lock chamber capable of processing a substrate, for example by exposing the substrate positioned therein to a reactive species.

Examples of the present invention include a method for removing halogen-containing residues from a substrate. The method includes transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber. The load lock chamber is coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly. The chemistry includes halogen. Halogen-containing residues are removed from the etched substrate in a second chamber volume of the load lock chamber. Cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

In another example, a method for removing halogen-containing residues from a substrate is disclosed. The method includes transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly. The chemistry includes halogen. Halogen-containing residues are removed from the etched substrate in a second chamber volume of the load lock chamber. Removing halogen-containing residues further includes heating the substrate to a temperature that is greater than or equal to about 20 degrees Celsius and less than or equal to about 1000 degrees Celsius. The etched substrate is cooled in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

In yet another example, a method for removing halogen-containing residues from a substrate includes transferring a substrate to a substrate processing system. The substrate is transferred through a first chamber volume of a load lock chamber coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead. The showerhead is disposed over a heated substrate support assembly. The chemistry includes halogen. The substrate is heated on a substrate support assembly for a predetermined time period. Heating the substrate removes halogen-containing residues from the etched substrate in a second chamber volume of the load lock chamber. The method further includes cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to examples, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical examples of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective examples.

FIG. 1 is a schematic sectional view of a load lock chamber according to one example of the present invention.

FIG. 2 is a schematic sectional view of the load lock chamber of FIG. 1 in a different status than in FIG. 1.

FIG. 3 is a schematic sectional view of a load lock chamber according to another example of the present invention.

FIG. 4 is a schematic sectional view of a load lock chamber according to another example of the present invention.

FIG. 5A is a schematic sectional view of the load lock chamber of FIG. 4 showing a lift assembly.

FIG. 5B is a schematic perspective view of a lift assembly according to one example of the present invention.

FIG. 6 is a schematic sectional view of a twin load lock chamber configuration according to one example of the present invention.

FIG. 7 is a plan view of a cluster tool system including load lock chambers according to one example of the present invention.

FIG. 8 is a flow diagram illustrating a method for processing a substrate according to one example of the present invention.

FIG. 9 is a flow diagram illustrating a method for processing a substrate according to another example of the present invention.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one example may be beneficially utilized on other examples without specific recitation.

DETAILED DESCRIPTION

Examples of the present invention provide apparatus and methods for fabricating devices on a semiconductor substrate. More particularly, examples of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate.

One example of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. The two chamber volumes are independently operable to increase throughput. A first chamber volume may be used to process a substrate disposed therein using reactive species, for example removing halogen residual from the substrate or removing photoresist from the substrate. A second chamber volume has two openings for substrate exchange between adjoining environments, such as an ambient environment of a factory interface and a vacuum environment of a transfer chamber. In one example, a cooled substrate support may be disposed in the second chamber volume. The cooled substrate support allows the processed substrates to be cooled down before exiting the vacuum environment, therefore, preventing undesirable reactions, such as silicon oxidation, which can result by exposing a warm substrate to the ambient atmosphere. In one example, a substrate supporting shelf may be disposed in the second chamber volume to receive an additional substrate in the second chamber volume so that incoming and outgoing substrates may have separate slots to reduce cross contamination and improve throughput. By including a chamber volume for processing substrates in a load lock chamber, additional locations become available in a processing system to accommodate additional processing chambers, thus increasing throughput without increasing footprint of the processing system. Additionally, using a cooled substrate support in a load lock chamber improves process quality by reduce undesirable reactions when processed substrate are exposed to atmosphere.

Another example of the present invention includes a load lock chamber having three chamber volumes. A third chamber volume may be stacked together between the first chamber volume for processing a substrate and the second chamber volume with the cooled substrate support. Similar to the second chamber volume, the third chamber volume has two openings for substrate exchange between adjoining isolated environments, such as an ambient environment of a factory interface and a vacuum environment of a transfer chamber. For example, the third chamber volume may be used to transfer incoming substrates from the factory interface to the transfer chamber while the second chamber volume may be used to transfer outgoing substrates from the transfer chamber to the factory interface. Because the incoming and outgoing substrates do not share the same chamber volume, potential for cross contamination is substantially elimiinated. Furthermore, using separate chamber volumes for incoming and outgoing substrates also provides flexibility for the system.

FIG. 1 is a schematic sectional view of a load lock chamber 100 according to one example of the present invention. The load lock chamber 100 has a chamber body assembly 110 defines three chamber volumes 110, 120 and 130. The three chamber volumes 110, 120, and 130 are vertically stacked together and are isolated from one another. The chamber volumes 110 and 120 are configured for transferring a substrate 104, and the chamber volume 120 is configured for processing a substrate 104.

In one example, the chamber body assembly 110 includes a sidewall 111 and a sidewall 112. The sidewall 111 and the sidewall 112 face opposite directions to interface with two environments. The sidewall 111 may be adapted to connect to an ambient environment, such as present in a factory interface, while side wall 112 may be adapted to connect to a vacuum environment, such as a vacuum environment present in a transfer chamber. The load lock chamber 100 may be used to exchange substrates between the two environments connected to the sidewalls 111, 112. The chamber body assembly 110 may further include a chamber lid 116, a chamber bottom 115 and interior walls 113, 114. The interior walls 113, 114 divide the interior of the load lock chamber 100 into the three chamber volumes 120, 130, and 140. The chamber volumes 130, 140 function as load locks for substrate exchange and the chamber volume 120 is configured for processing a substrate.

The chamber volume 120 is defined between the sidewalls 111, 112, the chamber lid 116 and the interior wall 113. An opening 121 is formed through the sidewall 112 to allow a substrate to be transferred into and out of the chamber volume 120. A slit valve 122 is disposed to selectively seal the opening 121. In the example shown in FIG. 1, the chamber volume 120 only has one opening 121 for substrate exchange, therefore, the chamber volume 120 cannot function as a load lock to exchange substrates between two environments. During operation, the chamber volume 120 may be selected connected to a vacuum processing environment via the opening 121. Optionally, an additional substrate exchange opening may be formed through the sidewall 111 to enable substrate exchange between the chamber volume 120 and the environment of the factory interface.

A heated substrate support assembly 125 is disposed in the chamber volume 120 for supporting and heating the substrate 104. According to one example, the heated substrate support assembly 125 includes embedded heating elements 127. A thermal insulator 126 may be disposed between the heated substrate assembly 125 and the interior wall 113 to reduce thermal exchange between the chamber body assembly 110 and the heated substrate support assembly 125. A gas distribution showerhead 123 is disposed in the chamber volume 120 over the heated substrate support assembly 125. A lift hoop assembly 124 is movably disposed around the heated substrate support assembly 125 and the gas distribution showerhead 123. The lift hoop assembly 124 is configured to confine a processing environment within immediately around the substrate support assembly 125 in the chamber volume 120, as well as being operable to load and unload substrates from the heated substrate support assembly 125 and substrate transfer robots (not shown).

Gas panels 101, 102 may be used to provide processing gases to the chamber volume 120 through the gas distributing showerhead 123 into the chamber volume 120. In one example, a remote plasma source 103 may be disposed between the gas planes 101, 102 and the gas distribution showerhead 123 so that dissociated species of processing gases may be supplied to the chamber volume 120. Alternatively, a RF power source may be applied between the gas distribution showerhead 123 and the heated substrate support assembly 125 to generate plasma within the chamber volume 120. In one example, the gas panel 101 may provide processing gases for an abatement process to remove residual material after etching and the gas panel 102 may provide processing gases for an ashing process to remove photoresist.

A more detailed description of apparatus and methods for processing a substrate in a chamber volume of a load lock chamber can be found in U.S. Provisional Patent Application Ser. No. 61/448,027, filed Mar. 1, 2011, entitled “Abatement and Strip process Chamber in a Dual Loadlock Configuration.

The chamber volume 130 is defined by the interior walls 113, 114, and the sidewalls 111, 112. The chamber volume 130 is vertically stacked within the chamber body assembly 110 between the chamber volume 120 and chamber volume 140. Opening 131, 132 are formed through the sidewalls 112, 111 to allow substrate exchange between the chamber volume 130 and two environments outside the chamber body assembly 110. A slit valve 133 is disposed to selectively seal the opening 131. A slit valve 134 is disposed to selectively seal the opening 132. The chamber volume 130 may include a substrate support assembly having at least one substrate slot for holding or storing substrate thereon. In one example, the chamber volume 130 includes three or more substrate supporting pins 135 for supporting a substrate 104 thereon. The three or more substrate supporting pins 135 may be fixedly positioned in the chamber volume 130. Other suitable substrate support, such as a shelf, an edge ring, brackets, may be positioned in the chamber volume 130 for supporting a substrate thereon.

The chamber volume 130 may serve as a load lock chamber and be used to exchange substrates between the two environments connected to the sidewalls 111, 112. The chamber volume 130 may also be used to store dummy substrates for testing or chamber cleaning.

The chamber volume 140 is defined by the sidewalls 111, 112, interior wall 114 and the chamber bottom 115. The chamber volume 140 is positioned below the chamber volume 130. Opening 141, 142 are formed through the sidewalls 112, 111 to allow substrate exchange between the chamber volume 140 and two environments outside the chamber body assembly 110. A slit valve 143 selectively seals the opening 141. A slit valve 144 selectively seals the opening 142. The slit valve 133 is designed not to obstruct the opening 141 while the slit valve 133 is positioned to seal the opening 131, as shown in FIG. 1. The openings 131, 141 may be opened and closed independently without affect one another. In one example, the slit valve 133 may include a door coupled to an actuator through two poles positioned clear from the opening 141. The door of the slit valve 133 passes in front of the opening 141 during opening and closing. However, the opening 141 is unobstructed when the slit valve 133 is in closed position and the opened position. It should be noted, other suitable designs may be used to enable independent operation of the slit valves 133, 143.

A cooled substrate support assembly 152 is configured to support and cool a substrate 104 within the chamber volume 140. The cooled substrate support assembly 152 includes a disk shaped body 145 having a substrate supporting surface 147. A plurality of cooling channels 146 are formed in the disk shaped body 145. A cooling fluid source 148 may be coupled to the cooling channels 146 to control the temperature of the disk shaped body 145 and the substrate 104 disposed thereon. Lifting pins 149 may be used to lift the substrate 104 from the disk shaped body 145. The lifting pins 149 may be attached to a plate 150 coupled to an actuator 151.

The chamber volume 140 may serve as a load lock chamber and be used to exchange substrates between the two environments connected to the sidewalls 111, 112. The cooled substrate support assembly 152 provides cooling to the substrate 104 while passing the chamber volume 140.

FIG. 2 is a schematic sectional view of the load lock chamber 100 wherein each chamber volume 120, 130, 140 are in a different state than as shown in FIG. 1. In FIG. 1, the chamber volume 120 is in substrate loading/unloading state with the lift hoop assembly 124 raised and the slit valve 122 opened. In FIG. 2, the chamber volume 120 is in processing position with the lift hoop assembly 124 lowered to confine a processing volume around the substrate 104 and the slit valve 122 closed. In FIG. 1, the chamber volume 130 is open to the ambient environment connected to the sidewall 111 with the slit valve 134 being open and the slit valve 133 being closed. In FIG. 2, the chamber volume 130 is open to the vacuum environment connected to the sidewall 112 with the slit valve 134 being closed and slit valve 133 being open. In FIG. 1, the chamber volume 140 is open to the vacuum environment connected to the sidewall 112 with the slit value 143 being closed and the slit valve 144 being closed. The substrate 104 rests on the cooled substrate support assembly 152 to be cooled. In FIG. 2, the chamber volume 140 is open to the ambient environment connected to the sidewall 111 with the slit valve 143 being open and the slit valve 144 being closed. The lift pins 149 are raised to position the substrate 104 in a loading/unloading position aligned with the opening 141.

The load lock chamber 100 may be used in a substrate processing system to provide an interface between a processing environment and a factory interface. Compared to traditional load lock chambers, the load lock chamber 100 may provide several improvements to a substrate processing system. First, by having a substrate processing chamber volume stacked over chamber volumes for load lock, the load lock chamber 100 frees space to allow an additional processing tool to be coupled to the vacuum transfer chamber, thus improves system throughput without increasing the foot print of the processing system. By dedicating the chamber volume 120 to processing, the need to pump the chamber volume 120 from atmosphere to vacuum state is eliminated, therefore improving processing throughput. Second, by having two chamber volumes as load lock, the load lock chamber 100 may provide separate paths for incoming and outgoing substrates, thus, substantially avoiding cross contamination between pre-processed and post-processed substrates. Third, by providing in a cooled substrate support assembly in a chamber volume, the load lock chamber 100 may provide cooling to a processed substrate before the processed substrate exits the processing system. The load lock chamber 100 reduces undesirable reactions on processed substrates because cooled substrates are less likely to react with atmosphere environment after exiting the processing system.

FIG. 3 is a schematic sectional view of a load lock chamber 300 according to another example of the present invention. The load lock chamber 300 is similar to the load lock chamber 100 of FIGS. 1 and 2 except that a chamber body assembly 310 of the load lock chamber 300 does not include the chamber volume 130 disposed between the chamber volumes 120 and 140. In the load lock chamber 300, the chamber volume 140 may be used as a load lock for both incoming and outgoing substrates. Alternatively, the chamber volume 120 may be used as a load lock using a second opening 323 formed through the sidewall 111 and a slit valve 324 configured to selectively seal the opening 323. Compared to the load lock chamber 100, the load lock chamber 300 has fewer components, therefore, cost less and may be easier to maintain.

FIG. 4 is a schematic sectional view of a load lock chamber 400 according to another example of the present invention. Similar to the load lock chamber 300, a chamber body assembly 410 of the load lock chamber 400 defines two chamber volumes, a chamber volume 430 positioned below the chamber volume 120. The chamber volume 120 may be dedicated to substrate processing and may only open to one side of the load lock chamber 400 via the opening 121 as the chamber volume 120 always remains under vacuum.

The chamber volume 430 may include a substrate supporting shelf 454 disposed above the cooled substrate support assembly 152 and configured to support a substrate 104 thereon. The chamber volume 430 may be used to hold one substrate 104 on the substrate supporting shelf 454 and to hold and/or cool another substrate 104 on the cooled substrate support assembly 152. In one example, the substrate supporting shelf 454 may be dedicated for incoming substrates and the cooled substrate support assembly 152 for outgoing substrates, so that as to substantially eliminate potential for direct contamination between the incoming and outgoing substrates. Alternatively, the chamber volume 430 may be used to transfer two substrates simultaneously.

In one example, the substrate supporting shelf 454 may be movably disposed over the cooled substrate support assembly 152 to enable substrate exchange. As shown in FIG. 4, the substrate supporting shelf 454 may include one or more posts 453 extending from a ring 452. The posts 453 are configured to provide support to a substrate 104. The ring 452 may be coupled to a lift assembly 450 to move the one or more posts 453 vertically within the chamber volume 430. In one example, the lift assembly 450 may be also coupled to a ring 451 connected to the lift pins 149 for raising a substrate from or lowering a substrate to the cooled substrate support assembly 152. In one example, the lift assembly 450 may be configured to move the substrate supporting shelf 454 and the lift pins 140 simultaneously. When the lift pins 149 raise to pick up the substrate 104 disposed on the cooled substrate support 152, the substrate supporting shelf 454 also moves up to ensure enough spacing between the substrate 104 on the lift pins 149 and the substrate supporting shelf 454 for loading or unloading.

FIG. 5A is a schematic sectional view of the load lock chamber 400 of FIG. 4 showing the lift assembly 450 and FIG. 5B is a schematic perspective view of the lift assembly 450. The lift assembly 450 may include a motor 502 coupled to a shaft 504 and configured to rotate the shaft 504. The shaft 504 may have threaded portions 506 and 508 for driving the substrate supporting shelf 454 and the lift pins 149 respectively. A threaded member 510 is coupled to the threaded portion 506 so that rotation of the shaft 504 moves the threaded member 510 along the shaft 504. A shaft 512 may be fixedly coupled between the threaded member 510 and the ring 452 to translate the vertical motion of the threaded member 510 to the ring 452 and the posts 453. Similarly, a threaded member 514 is coupled to the threaded portion 508 so that rotation of the shaft 504 moves the threaded member 514 along the shaft 504. A shaft 516 may be fixedly coupled between the threaded member 514 and the ring 451 to translate the vertical motion of the threaded member 514 to the ring 451 and the lift pins 149. In one example, the shafts 512, 516 may be concentrically disposed as shown in FIG. 5A. Alternatively, the shafts 512, 516 may be disposed apart from one another.

In one example, the threaded portions 506 and 508 may have different pitches so that the threaded members 510, 514 move at different speeds (and thus distances) when the shaft 504 is rotated by the motor 502. In one example, pitches of the threaded portions 506 and 508 may be set so that the lift pins 149 moves faster than the substrate supporting shelf 454, thus, the substrate supporting shelf 454 has a smaller range of motion than the lift pins 149. By moving the substrate support shelf 454 and the lift pins 149 in distances as short as possible, the height of the chamber volume 430 can be minimized, thereby reducing pumping time and requirements. In one example, the lift pins 149 move about twice as fast as the substrate supporting shelf 454.

The load lock chamber 400 may provide the chamber volumes 120 dedicated to processing substrates (i.e., no direct path to ambient environments), while provide cooling and separated paths for incoming and outgoing substrates to reduce cross contamination. Therefore, the load lock chamber 400 may be used to increase throughput, reduce contamination, and reduce undesired reactions on hot substrates.

Load lock chambers according to examples of the present invention may be used in pairs to double the productivity. FIG. 6 is a schematic sectional view of a twin load lock chamber 600 configuration according to one example of the present invention. The twin load lock chamber 600 includes two load lock chambers 100A, 100B disposed side by side in a unitary chamber body assembly 610. As shown in FIG. 6, the two load lock chambers 100A, 100B may be mirror image of one another. The load lock chambers 100A, 100B may operate independently from one another or in synchronicity.

The load lock chambers 100A, 100B are similar to the load lock chamber 100 of FIG. 1. The load lock chamber 100A includes chamber volumes 120A, 130A, 140A and the load lock chamber 100B includes chamber volumes 120B, 130B, 140B. The load lock chambers 100A, 100B may share the gas sources 101, 102 for processing substrates in the chamber volumes 120A, 120B. Each chamber volume 120A, 120B may be coupled to a vacuum pump 602A, 602B through control valves 604A, 604B. The vacuum pumps 602A, 602B are configured to maintain a vacuum environment in the chamber volumes 120A, 120B. The chamber volumes 130A, 140A, 130B, 140B function as load lock volumes for substrate exchange. In one example, the chamber volumes 130A, 140A, 1308, 140B may share one vacuum pump 606. Control valves 608A, 610A, 608B, 610B may be coupled between the vacuum pump 606 and the chamber volumes 130A, 140A, 130B, 140B to enable independent control.

The load lock chambers according to examples of the present invention may be used to provide interface between a substrate processing system and a factory interface in a cluster tool. FIG. 7 is a plan view of a cluster tool system 700 including load lock chambers according to one example of the present invention. The cluster tool system 700 includes one or more load lock chambers according to examples of the present invention. The cluster tool system 700 of FIG. 7 is shown incorporating the twin load lock chamber 600. However, it should be noted that load lock chambers 100, 300 and 400 can also be utilized.

The cluster tool system 700 includes a system controller 744, a plurality of processing chambers 712 and the twin load-lock chamber 600 that are coupled to a vacuum substrate transfer chamber 708. In one example, the transfer chamber 708 may have multiple sides and each side is configured to connect with a twin processing chamber 712 or the twin load lock chamber 600. As shown in FIG. 7, three twin processing chambers 712 are coupled to the transfer chamber 708. The twin load lock chamber 600 is coupled to the transfer chamber 708. A factory interface 704 is selectively coupled to the transfer chamber 708 by the load lock chambers 100A, 100B of the twin load lock chamber 600.

The factory interface 704 may include at least one docking station 702 and at least one factory interface robot 706 to facilitate transfer of substrates. Each of the load lock chambers 100A, 100B of the twin load lock chamber 600 have two ports coupled to the factory interface 704 and three ports coupled to the transfer chamber 708. The I load lock chambers 100A, 100B are coupled to a pressure control system (not shown) which pumps down and vents chamber volumes in the load lock chambers 100A, 100B to facilitate substrate exchange between the vacuum environment of the transfer chamber 708 and the substantially ambient (e.g., atmospheric) environment of the factory interface 704.

The transfer chamber 708 has a vacuum robot 710 disposed therein for transferring substrates among the load lock chambers 100A, 100B and the processing chambers 712. In one example, the vacuum robot 710 has two blades and is capable of simultaneously transferring two substrates among the load lock chambers 100A, 100B and the processing chambers 712.

In one example, at least one process chambers 712 is an etch chamber. For example, the etch chamber may be a Decoupled Plasma Source (DPS) chamber available from Applied Materials, Inc. The DPS etch chamber uses an inductive source to produce high-density plasma and comprises a source of radio-frequency (RF) power to bias the substrate. Alternatively, at least one of the process chambers 712 may be one of a HART™, E-MAX®, DPS®, DPS II, PRODUCER E, or ENABLER® etch chamber also available from Applied Materials, Inc. Other etch chambers, including those from other manufacturers, may be utilized. The etch chambers may use a halogen-containing gas to etch the substrate 924 therein. Examples of halogen-containing gas include hydrogen bromide (HBr), chlorine (Cl₂), carbon tetrafluoride (CF₄), and the like. After etching the substrate 924, halogen-containing residues may be left on the substrate surface.

The halogen-containing residues may be removed by a thermal abatement process in at least one of the load lock chambers 100A, 100B. For example, a thermal treatment process may be performed in one or both of the chamber volumes 120A, 120B of the load lock chambers 100A, 100B. Alternatively or in addition to an abatement process, an ashing process may be performed in one or both of the chamber volumes 120A, 120B of the load lock chambers 100A, 100B.

The system controller 744 is coupled to the cluster tool system 700. The system controller 744 controls the operation of the cluster tool system 700 using a direct control of the process chambers 712 or alternatively, by controlling the computers (or controllers) associated with the processing chambers 712 and the cluster tool system 700. In operation, the system controller 744 enables data collection and feedback from the respective chambers and system controller 744 to optimize performance of the cluster tool system 700. The system controller 744 includes a central processing unit (CPU) 738, a memory 740, and support circuit 742.

FIG. 8 is a flow diagram illustrating a method 800 for processing a substrate according to one example of the present invention. The method 800 may be performed in the cluster tool system 700 in FIG. 7 having load lock chambers 100A, 100B with three chamber volumes. It is contemplated that the method 800 may be performed in other suitable processing systems, including those from other manufacturers.

The method 800 begins at box 810 by receiving a substrate having a layer disposed thereon from a factory interface, such as the factory interface 704 in FIG. 7, in a first chamber volume of a load lock chamber coupled to the factory interface, such as the chamber volume 130A or 130B of the load lock chamber 100A or 100B.

At box 820, the first chamber volume containing the substrate may be pumped down to a vacuum level equal to that of a transfer chamber coupled to the load lock chamber. The substrate is then transferred from the load lock chamber to the transfer chamber. In one example, the first chamber volume of the load lock chamber may be dedicated to provide paths to incoming substrates only.

At box 830, the substrate is transferred to one or more processing chambers coupled to the transfer chamber for one or more processes. The processes may include etching one or more films, such as a polymer film, on the substrates under a patterned mask using a halogen-containing gas. The patterned mask may include photoresist and/or hard mask. Suitable examples of halogen-containing gas include, but not limited to, hydrogen bromide (HBr), chlorine (Cl₂), carbon tetrafluoride (CF₄), and the like. The etching processes may leave halogen containing residue on the substrate.

Optionally, the substrate may be transferred from the first chamber volume of the load lock chamber to a second chamber volume of the load lock chamber through the transfer chamber for a pre-heating prior to being processed in the processing chambers. For example, the substrate may be transferred from the chamber volume 130 to the chamber volume 120 to be pre-heated on the heated substrate support 125. In one example, the substrate may be preheated to a temperature between about 20 degrees Celsius and about 400 degrees Celsius.

At box 840, after being processed in one or more processing chambers connected to the transfer chamber, the substrate is transferred to the second chamber volume of the load lock chamber. The second chamber volume, such as the chamber volume 120 of the load lock chamber 100, may be dedicated to substrate processing. Depending on processing recipe, the second chamber volume of the load lock chamber may be configured to different processes.

At box 850, thermal treatment process may be performed on a the substrate to remove the halogen-containing residues from the substrate generated during processing of box 830 prior to exposure to atmospheric conditions in the factory interface or other locations. For example, the substrate may be transferred to the chamber volume 120 of the load lock chamber 100 to remove the halogen containing residues.

In one example, a thermal treatment may be performed to etched substrate in the second chamber volume of the load lock chamber to remove the halogen-containing residues. For example, the substrate may placed on the heated substrate support assembly 125 of the chamber volume 120 of the load lock chamber 100. The heated substrate support assembly 125 heats the substrate to a temperature between about 20 degrees Celsius and about 1000 degrees Celsius, such as between about 150 degrees Celsius and about 300 degrees Celsius, for example about 250 degrees Celsius, at between about 5 seconds and about 30 seconds. The rapid heating of the substrate by heated substrate support assembly 125 allows the halogen-containing residues on the etched substrate to be removed without increasing process cycle time which would be encountered if the residues were removed in one if the processing chambers. In one example, the substrate may be heated by the heated substrate support assembly 125 at a predetermined time period until the halogen-containing residues are removed from the etched substrate.

In another example, plasma of a gas mixture may be used to promote the conversion of the halogen containing residues into non-corrosive volatile compounds, thereby increasing the removal efficiency of the halogen-containing residues from the etched substrate surface. The gas mixture may include an oxygen-containing gas, such as O₂, O₃, water vapor (H₂O), a hydrogen-containing gas, such as H₂, forming gas, water vapor (H₂O), alkanes, alkenes, and the like, or an inert gas, such as a nitrogen gas (N₂), argon (Ar), helium (He), and the like. For example, the gas mixture may include oxygen, nitrogen, and a hydrogen-containing gas. In one example, the hydrogen-containing gas is at least one of hydrogen (H₂) and water vapor (H₂O).

In another example, the thermal treatment process may be in the form of an ashing process performed in a chamber volume of the load lock chamber after the substrate being etched in the cluster tool system to remove the mask layers or a photoresist layer from the substrate. During an ashing process, an oxygen-based plasma may be supplied to the chamber volume of the load lock chamber white the temperature of the substrate may be maintained at 15 to 300 degrees Celsius. Various oxidizing gases can be used including, but not limited to, O₂O₃, N₂O, H₂O, CO, CO₂, alcohols, and various combinations of these gases. In other examples of the invention, nonoxidizing gases may be used including, but not limited to, N₂, H₂O, H₂, forming gas, NH₃, CH₄, C₂H₆, various halogenated gases (CF₄, NF₃, C₂F₆, C₄F₈, CH₃F, CH₂F₂, CHF₃), combinations of these gases and the like. In another example, mask and/or photoresist layer may be stripped simultaneously at box 850.

At box 860, the substrate may be transferred from the second chamber volume of the load lock chamber to a third chamber volume of the load lock chamber through the transfer chamber. The third chamber volume of the load lock chamber may be dedicated to provide path to outgoing substrates. The third chamber volume may be chamber volume 140 of the load lock chamber 100.

At box 870, the substrate is cooled in the third chamber volume of the load lock chamber. The substrate may be lowered to a cooled substrate support assembly, such as the cooled substrate support assembly 152 of the load lock chamber 100, for cooling.

At box 880, the third chamber volume is vented to atmosphere pressure and the cooled substrate is returned to the factory interface. Since the substrate is cooled prior to exposing to atmosphere, undesirable reactions, such as silicon oxidation, are reduced.

FIG. 9 is a flow diagram illustrating a method 900 for processing a substrate according to another example of the present invention. The method 900 is similar to the method 800, except the method 900 is performed in a cluster tool having load lock chambers with two chamber volumes, such as load lock chambers 300, 400 described above.

At box 910, a substrate having a layer disposed thereon is transferred from a factory interface, such as the factory interface 704 in FIG. 7, to a first chamber volume of a load lock chamber coupled to the factory interface. In one example, when the load lock chamber 300 is used, the substrate may be transferred to the chamber volume 140 so that the chamber volume 120 can be dedicated to processing substrates. In another example, when the load lock chamber 400 is used, the substrate may be transferred to the substrate supporting shelf 454 of the chamber volume 430.

At box 920, the first chamber volume containing the substrate may be pumped down to a vacuum level equal to that of a transfer chamber coupled to the load lock chamber. The substrate is then transferred from the load lock chamber to the transfer chamber.

At box 930, similar to the box 830 of the method 800, the substrate is transferred to one or more processing chambers coupled to the transfer chamber for one or more processes. The processes may include etching one or more films, such as a polymer film, on the substrates under a patterned mask using a halogen-containing gas.

At box 940, after being processed in one or more processing chambers connected to the transfer chamber, the substrate is transferred to the second chamber volume of the load lock chamber to remove residues and/or hard mask or photoresist. The second chamber volume, such as the chamber volume 120 of the load lock chamber 300 or the load lock chamber 400, may be dedicated to substrate processing. Depending on the process recipe, the second chamber volume of the load lock chamber may be configured to different processes. Similar to the processes described at box 850, a stripping process, an ashing process, or both stripping and ashing processes may be performed to the substrate to remove any desired combination of the halogen-containing residues, hard mask, and photoresist.

At box 950, the substrate may be transferred from the second chamber volume of the load lock chamber back to the chamber volume of the load lock chamber through the transfer chamber to be cooled.

At box 960, the substrate is cooled in the first chamber volume of the load lock chamber. The substrate may be lowered to a cooled substrate support assembly, such as the cooled substrate support assembly 152 of the load lock chamber 300 or 400, for cooling.

At box 970, the first chamber volume is vented to atmosphere pressure and the cooled substrate is returned to the factory interface.

While the foregoing is directed to examples of the present invention, other and further examples of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. 

What is claimed is:
 1. A method for removing halogen-containing residues from a substrate, the method comprising: transferring a substrate into a substrate processing system through a first chamber volume of a load lock chamber coupled to a transfer chamber of the substrate processing system; etching the substrate in a processing chamber coupled to the transfer chamber of the substrate processing system with halogen-containing chemistry; removing halogen-containing residues from the etched substrate in a second chamber volume of the load lock chamber; and cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.
 2. The method of claim 1, wherein the cooled substrate support assembly is disposed in the first chamber volume or a third chamber volume of the load lock chamber, and cooling the substrate comprises transferring the substrate from the second chamber volume to the first chamber volume or the third chamber volume through the transfer chamber.
 3. The method of claim 2, wherein the halogen-containing residues include at least one of hydrogen bromide (HBr), chlorine (Cl₂), and carbon tetrafluoride (CF₄).
 4. The method of claim 1, wherein removing halogen-containing residues further includes at least one of a stripping process or an ashing process, or a combination thereof.
 5. The method of claim 4, wherein removing halogen-containing residues further includes removing a hard mask or a photoresist.
 6. The method of claim 1, wherein removing halogen-containing residues further comprises: introducing a gas mixture to the second chamber volume, wherein the gas mixture includes at least one of an oxygen-containing gas, a hydrogen-containing gas, or an inert gas.
 7. The method of claim 6, wherein the oxygen-containing gas includes at least one of O₂ or O₃, wherein the hydrogen-containing gas includes at least one of a water vapor (H₂O), alkane, or an alkene, and the inert gas includes nitrogen (N₂), argon (Ar), or helium (He), or any combination thereof.
 8. The method of claim 1, wherein removing halogen-containing residues includes heating the substrate for about 5 seconds and about 30 seconds at a temperature between about 150 degrees Celsius and about 300 degrees.
 9. A method for removing halogen-containing residues from a substrate, comprising: transferring a substrate into a substrate processing system through a first chamber volume of a load lock chamber coupled to a transfer chamber of the substrate processing system; etching the substrate in a processing chamber coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly, wherein the chemistry comprises halogen; removing halogen-containing residues from the etched substrate in a second chamber volume of the load lock chamber, wherein removing halogen-containing residues further comprises: heating the substrate to a temperature that is greater than or equal to about 20 degrees Celsius and less than or equal to about 1000 degrees Celsius; and cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.
 10. The method of claim 9, wherein the cooled substrate support assembly is disposed in the first chamber volume or a third chamber volume of the load lock chamber, and cooling the substrate comprises transferring the substrate from the second chamber volume to the first chamber volume or the third chamber volume through the transfer chamber.
 11. The method of claim 10, wherein the halogen-containing residues include at least one of hydrogen bromide (HBr), chlorine (Cl₂), and carbon tetrafluoride (CF₄).
 12. The method of claim 9, wherein removing halogen-containing residues further includes at least one of a stripping process or an ashing process, or a combination thereof.
 13. The method of claim 12, wherein removing halogen-containing residues further includes removing a hard mask or a photoresist.
 14. The method of claim 9, wherein removing halogen-containing residues further comprises: introducing a gas mixture to the second chamber volume, wherein the gas mixture includes at least one of an oxygen-containing gas, a hydrogen-containing gas, or an inert gas.
 15. The method of claim 14, wherein the oxygen-containing gas includes at least one of O₂ or O₃, wherein the hydrogen-containing gas includes at least one of a water vapor (H₂O), alkane, or an alkene, and the inert gas includes nitrogen (N₂), argon (Ar), or helium (He), or any combination thereof.
 16. The method of claim 9, wherein removing halogen-containing residues includes heating the substrate for about 5 seconds and about 30 seconds.
 17. A method for removing halogen-containing residues from a substrate, comprising: transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber coupled to a transfer chamber of the substrate processing system; etching the substrate in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly, wherein the chemistry comprises halogen; heating the substrate on a substrate support assembly for a predetermined time period, wherein heating the substrate removes halogen-containing residues from the etched substrate in a second chamber volume of the load lock chamber; and cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.
 18. The method of claim 17, wherein the cooled substrate support assembly is disposed in the first chamber volume or a third chamber volume of the load lock chamber, and cooling the substrate comprises transferring the substrate from the second chamber volume to the first chamber volume or the third chamber volume through the transfer chamber.
 19. The method of claim 18, wherein the halogen-containing residues include at least one of hydrogen bromide (HBr), chlorine (Cl₂), and carbon tetrafluoride (CF₄).
 20. The method of claim 17, wherein removing halogen-containing residues further includes at least one of a stripping process or an ashing process, or a combination thereof. 